preliminary data sheet 1.1 1 preliminary specifications s ubject to change without notice filtronic compound semiconductors ltd contact details (uk): tel: +44 (0) 1325 301111 fax: +44 (0) 1325 306177 email: sales@filcs.com contact details (usa): tel: +1 (408) 850 5790 fax: +1 (408) 850 5766 email: sales@filcsi.com website: www.filcs.com fms2010 sp6t gaas multi-band gsm antenna switch features: ? available in die form ? suitable for multi-band gsm/dcs/pcs/edge applications ? excellent low control voltage performance ? excellent harmonic performance under gsm/ dcs/pcs power levels ? very high tx-rx isolation >45db typ. at 1.8ghz ? very high tx-tx isolation >30db typ. at 1.8ghz ? very low tx insertion loss ? very low control current description and applications: the fms2010 is a low loss, high power and linear single pole six throw gallium arsenide antenna switch designed for use in mobile handset applications . the die is fabricated using the filtronic fl05 0.5 m switch process technology that offers le ading edge performance optimised for switch applications. the fms2010 is designed for use in dual, tri and quad ? band gsm handset antenna switch modules and rf front-end modules. electrical specifications: (t ambient = 25c,v control = 0v/2.5v, z in = z out = 50 ? ) parameter test conditions min typ max units tx insertion loss 0.5 ? 1.0 ghz 1.0 ? 2.0 ghz __ __ 0.5 0.6 0.7 0.9 db db rx insertion loss 0.5 ? 1.0 ghz 1.0 ? 2.0 ghz __ __ 0.6 0.8 0.8 1.2 db db return loss 0.5 ? 2.5 ghz __ 23 __ db isolation tx-tx 0.5 ? 1.0 ghz 1.0 ? 2.0 ghz 30 25 33 31 __ __ db db isolation tx-rx 0.5 ? 1.0 ghz 1.0 ? 2.0 ghz 45 40 50 45 __ __ db db 2nd harmonic level 1 ghz, pin = +35 dbm, 100% duty cycle 2 ghz, pin = +33 dbm, 100% duty cycle (17:1 vswr) __ __ -75 -75 -70 -70 dbc dbc 3rd harmonic level 1 ghz, pin = +35 dbm, 100% duty cycle 2 ghz, pin = +33 dbm, 100% duty cycle (17:1 vswr) __ __ -75 -75 -70 -70 dbc dbc switching speed : trise, tfall ton, toff 10% to 90% rf and 90% to 10% rf 50% control to 90% rf and 50% control to 10% rf __ __ < 0.3 < 1.0 __ __ s s note: external dc blocking capacitors are required on all rf ports (typ: 100pf). all unused ports terminated in 50 ? . ant vtx1 tx1 vtx2 tx2 vrx1 rx1 vrx2 rx2 vrx3 rx3 rx4 vrx4 vrxc ant vtx1 tx1 vtx2 tx2 vrx1 rx1 vrx2 rx2 vrx3 rx3 rx4 vrx4 vrxc
preliminary data sheet 1.1 2 preliminary specifications s ubject to change without notice filtronic compound semiconductors ltd contact details (uk): tel: +44 (0) 1325 301111 fax: +44 (0) 1325 306177 email: sales@filcs.com contact details (usa): tel: +1 (408) 850 5790 fax: +1 (408) 850 5766 email: sales@filcsi.com website: www.filcs.com fms2010 absolute maximum ratings: parameter absolute maximum max input power +38dbm control voltage +8.5v operating temp -40 c to 100c storage temp -55 c to 150c note: exceeding any one of these absolute maximu m ratings may cause permanent damage to the device. truth table: vrxc vrx4 vtx2 vrx3 vrx1 vrx2 vtx1 on path low low low low low low high ant-tx1 low low high low low low low ant-tx2 high low low low high low low ant-rx1 high low low low low high low ant-rx2 high low low high low low low ant-rx3 high high low low low low low ant-rx4 note: ?high? = +2.5v to +5v ?low? = 0v to +0.2v
preliminary data sheet 1.1 3 preliminary specifications s ubject to change without notice filtronic compound semiconductors ltd contact details (uk): tel: +44 (0) 1325 301111 fax: +44 (0) 1325 306177 email: sales@filcs.com contact details (usa): tel: +1 (408) 850 5790 fax: +1 (408) 850 5766 email: sales@filcsi.com website: www.filcs.com fms2010 pad and die layout: note: co-ordinates are referenced from the bottom left hand corner of the die to the centre of the bond pad opening die size ( m) die thickness ( m) min. bond pad pitch( m) min. bond pad opening ( m) 1100 x 1000 150 m 113 70 x 70 pad number pad name description pin coordinates (m) a vrxc common receive switch control voltage 195, 126 b vrx4 rx4 control voltage 315, 126 c vtx2 tx2 control voltage 440, 126 d vrx3 rx3 control voltage 556, 126 e vrx1 rx1 control voltage 675, 126 f vrx2 rx2 control voltage 795, 126 g vtx1 tx1 control voltage 919, 126 h tx2 tx2 rf output 108, 904 i tx1 tx1 rf output 108, 242 j ant antenna 474, 912 k rx4 rx4 rf output 988, 880 l rx3 rx3 rf output 988, 750 m rx2 rx2 rf output 988, 420 n rx1 rx1 rf output 988, 290 o gnd ground 1 108, 514 p gnd ground 2 108, 627 q gnd ground 3 988, 525 j k l m n a b c d e f g h i o p q
preliminary data sheet 1.1 4 preliminary specifications s ubject to change without notice filtronic compound semiconductors ltd contact details (uk): tel: +44 (0) 1325 301111 fax: +44 (0) 1325 306177 email: sales@filcs.com contact details (usa): tel: +1 (408) 850 5790 fax: +1 (408) 850 5766 email: sales@filss.com website: www.filcs.com fms2010 typical measured performance curves: tx loss rx loss tx-tx isolation rx-rx isolation tx-rx isolation tx harmonic level 0.5 1 1.5 2 2.5 frequency (ghz) -40 -30 -20 -10 isolation (dbm) 1.8 ghz -23.3 db 0.8 ghz -28.5 db rx3 - rx1 isolation rx2 - rx1 isolation rx4 - rx2 isolation 0.5 1 1.5 2 2.5 frequency (ghz) -60 -50 -40 -30 -20 -10 0 isolation (db) 0.8 ghz -33.9 db 1.8 ghz -31.4 db tx1 - tx2 isolation tx2 - tx1 isolation 0.5 1 1.5 2 2.5 frequency (ghz) -80 -60 -40 -20 isolation (dbm) 1.8 ghz -45.1 db 1.8 ghz -47.7 db 0.8 ghz -50.5 db rx3 - tx1 isolation rx4 - tx2 isolation rx2 - tx2 isolation
preliminary data sheet 1.1 5 preliminary specifications s ubject to change without notice filtronic compound semiconductors ltd contact details (uk): tel: +44 (0) 1325 301111 fax: +44 (0) 1325 306177 email: sales@filcs.com contact details (usa): tel: +1 (408) 850 5790 fax: +1 (408) 850 5766 email: sales@filss.com website: www.filcs.com fms2010 evaluation board: bom label component c1 capacitor, 47pf, 0402 c2 capacitor, 470pf, 0603 c3 capacitor, 100pf, 0402 c1 c1 c1 c1 c1 c1 c1 c2 c2 c2 c2 c2 c2 c2 c3 c3 c3 c3 c3 c3 c3
preliminary data sheet 1.1 6 preliminary specifications s ubject to change without notice filtronic compound semiconductors ltd contact details (uk): tel: +44 (0) 1325 301111 fax: +44 (0) 1325 306177 email: sales@filcs.com contact details (usa): tel: +1 (408) 850 5790 fax: +1 (408) 850 5766 email: sales@filss.com website: www.filcs.com fms2010 ordering information: part number description FMS2010-000-WP fms2010-000-gp die ? waffle pak die ? gel-pak fms2010-000-eb die mounted on evaluation board fms2010-000-ff wafer mounted on film frame preferred assembly instructions: gaas devices are fragile and should be handled with great care. specially designed collets should be used where possible. the back of the die is not metallised and the recommended mounting method is by the use of conductive epoxy. epoxy should be applied to the a ttachment surface uniformly and sparingly to avoid encroachment of epoxy on to the top face of the die and ideally should not exceed half the chip height. for automated dispense ablestick lmisr4 is recommended and for manual dispense ablestick 84-1 lmi or 84-1 lmit are recommended. thes e should be cured at a temperature of 150 c for 1 hour in an oven especially set aside for epoxy curing only. if possible the curing oven should be flushed with dry nitrogen. this part has gold (au) bond pads requiring th e use of gold (99.99% pure) bondwire. it is recommended that 25.4 m diameter gold wire is used. thermosonic ball bonding is preferred. a nominal stage temperature of 150c and a bonding fo rce of 40g has been shown to give effective results for 25 m wire. ultrasonic energy shall be kept to a minimum. for this bonding technique, stage temperature should not be raised above 200c and bond force should not be raised above 60g. thermosonic wedge bonding and thermocompression wedge bonding can also be used to achieve good wire bonds. bonds should be made from the die first and then to the mounting substrate or package. the physical length of the bondwires should be minimised especially when making rf or ground connections. handling precautions: to avoid damage to the devices care should be exercised during handling. proper electrostatic discharge (esd) precautions should be observed at all stages of storage, handling, assembly, and testing. these devices should be treated as class 1a (0-500 v) as defined in jedec standard no. 22-a114-b. further information on esd control measures can be found in mil-std-1686 and mil- hdbk-263. disclaimers: this product is not designed for use in any space based or life sustaining/supporting equipment.
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